FDN5630
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN5630
Datasheet:
Description:
MOSFETs SuperSOT-3 SMD/SMT N-Channel number of channels:1 500 mW 60 V Continuous Drain Current (ID):1.7 A 10 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 60 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Terminals | 3 |
| Number of Elements | 1 |
| Current | 17 A |
| Current Rating | 1.7 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 400 pF |
| Continuous Drain Current (ID) | 1.7 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Rise Time | 6 ns |
| Dual Supply Voltage | 60 V |
| Min Breakdown Voltage | 60 V |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 73 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1774
Distributors
pcbx
pcbxUnit Price$0.20813
Ext.Price$0.20813
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.20813 | $0.20813 |
| 10 | $0.18474 | $1.84740 |
| 50 | $0.16397 | $8.19850 |
| 100 | $0.14190 | $14.19000 |
| 500 | $0.12280 | $61.40000 |
| 1000 | $0.11800 | $118.00000 |
| 3000 | $0.11339 | $340.17000 |
| 5000 | $0.10692 | $534.60000 |